A method for improving analog gain in long channel devices associated with a semiconductor workpiece is provided. The glass layers may serve as substrates for components such as a color filter layer and thin-film transistor layer. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20\xd720 \u03bcm.