To provide a technology capable of manufacturing a semiconductor device equipped with a HKMG transistor having a gate insulating film comprised of a high-k material and a gate electrode comprised of a metal material and having stable operation characteristics. 5%, exhibiting a proportion of \u03b1-1,6-glucosidic linkages of between 20% and 30%, a Mw, determined by light scattering, of between 20\xb7103 and 30\xb7103 daltons, and an osmolality of less than 25 mOsmkg. One hydraulic circuit powers the rotating drill head; a second hydraulic circuit powers a mud and tailings evacuation pump; and a third hydraulic circuit articulates the drill head to provide direction.