Embodiments of a silicon-on-insulator wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The implant includes a metal portion having an internal three-dimensional cavity, the cavity having an opening to an outer surface of the metal portion, a ledge circumferentially surrounding at least a portion of the opening, and a porous metal insert formed in a three-dimensional shape conforming to the shape of the cavity and enclosed by the cavity without being bonded to the cavity. The vouching process may be implemented by allowing the first device to overlay its digital signature on a registration request that has been signed and transmitted by the second device. The schedule module is configured to store schedule information. Heat transfer between said heat transfer bus and one or more of the heat transfer systems is modulated or switched on or off by the activating components.