A dielectric ceramic contains a barium titanate compound oxide as a main component; at least one rare earth element R selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; Mg; and Ni, such that a crystalline compound oxide containing the rare earth element R, Ni, and Ti as main components is present. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. The slits are parallel and extend from the first circuit board to the second circuit board. Also, the first and second blade members may be coupled at a pivot point by a fastener held in tension along its longitudinal axis by the blade members. Each of the brackets has a curved portion, a flange portion and a mounting portion. The system may include a first electrochemical cell, a first reactor, a second electrochemical cell, at least one second reactor, and at least one third reactor.