Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A composition contains 2,4,6,8,10,12-hexanitro-2,4,6,8,10,12-hexaazaisowurtzitane and at least one energetic material. The method of closing a wound includes the steps of attaching a plurality of skin anchors to external skin around a periphery of a wound, extending a line between the skin anchors around substantially the entire periphery of the wound, and providing tension to the line to draw the skin anchors toward the wound. The second amplifier amplifies the pixel signals, whose sensitivities have been adjusted, with a second amplification factor. The memory array may be loaded with configuration data. An obstruction is formed between the plunger rod and the flange of hollow fluid chamber before the safety locking tab is pressed into the locking socket, so that the plunger rod can not be thoroughly pressed into the hollow cylinger.