A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0. A liquid crystal device includes a liquid crystal layer sandwiched between a first substrate and a second substrate, and a first electrode and a second electrode formed on a face of the above-described second substrate on a side of the above-described liquid crystal layer. The bottom frame is supported on wheels that fit under the sill. Any one or more of these benzodiazepine compounds can be used to treat a variety of dysregulatory disorders related to cellular death.