In a bottom gate type semiconductor device made of a semiconductor layer with crystal structure, sourcedrain regions are constructed by a lamination layer structure including a first conductive layer, a second conductive layer having resistance higher than the first conductive layer, and an intrinsic or substantially intrinsic semiconductor layer. The modifier is an acrylonitrile-butadiene-styrene copolymer. A fulcrum is formed between the hook and the slope. A notification that indicates an occurrence of the at least one event is received from the printing device. Thus, the PMSCR with guard ring control circuit can enhance both the ESD performance and the power-zapping immunity in the application of the HV pad. In a rectangular layout, the upper right transistor is connected to the lower left transistor by a short connection along the y axis.