A laser annealing method for annealing a stacked semiconductor structure having at least two stacked layers is disclosed. The first channel is configured to communicate a cooling fluid along a first swirl flow path and the second channel is configured to communicate the cooling fluid along a second swirl flow path that is opposite the first swirl flow path. At least one punch through suppression region is disposed under the gate between the screening region and the well. In another embodiment, the smoking articles in each of the at least two tiers are of different length and the upper ends of the separately wrapped bundles of smoking articles are longitudinally offset relative to one another. The first data structure includes an entry for each match between the biographical information of a person and an affiliation included in the table of affiliations. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a width and an exposed length of a bottom electrode.