A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy. A CV-joint is positioned adjacent to the wheel hub. A key step in the method of the present invention is depositing a first conductive layer over the dielectric interlayer. The inner side seal of these seals comprises an annular slinger and an annular sealing plate. Further, various subsystems are considered, such as fuel vapor purging, air-fuel ratio control, engine torque control, catalyst design, and exhaust system design. Accordingly, when a load, which exceeds a preset torque, is applied to the internal gear, the internal gear is moved in a direction toward an input shaft or a direction toward an output shaft while making rotation in a direction different from that of the sun gear to automatically switch the speed reducing ratio.