Provided is a fixing member including an annular base material, and an innermost layer that is formed on an inner circumferential surface of the annular base material, the innermost layer including heat-resistant fibers. Base lead-out polysilicon connecting the first base electrode and a first base region passes over a second region provided out of the first region and a resistor element is added. The current write request for the cache memory is rejected when a sum of the count of the write data associated with the failure boundary and the write data in the current write request exceeds a determined percentage of the usable region of the NVS.