A method of driving phase change memory device includes initializing all memory cells and programming individually at least two selected memory cells disposed at random positions, wherein the selected memory cells are selected among the initialized memory cells. The photodiodes are grouped into pixel units, where each pixel unit includes at least four photodiodes and shared pixel unit circuitry coupled to each of the four photodiodes. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Phase difference states are replaced between the first polarizing areas and the second polarizing areas of the optical unit, synchronized with replacement of the first and second image forming areas. The drive device has a taut cable line which is fixed at one end to the generator shaft and wound with a number of turns around the generator shaft.