A method of monolithically fabricating an LDMOS transistor with a fabrication process that is compatible with a sub-micron CMOS fabrication process. Based on this electronic information name, accesses to the electronic information are conducted. Copolymer compositions are provided. While the sustain period is performed on one cell group, the sustain period may be selectively performed on other cell groups on which the address period has been performed. A modified method, as well as a method for dynamically assigning and deploying newly arriving traffic segments, are also provided.