A fin structure including a vertical alternating stack of a first isoelectric point material layer having a first isoelectric point and a second isoelectric material layer having a second isoelectric point less than the first isoelectric point is formed. The disclosed techniques of the system and method create an accumulation buffer of the data structures for accumulating changes to the data structures. A dial tone generator generates one of the first and second audible tones in response to one of the first and second signals, respectively. The plurality of raised portions and the plurality of receiving areas are configured such application of an axial compressive force spreads the plurality of raised portions into the plurality of receiving areas. Furthermore, the storage device incorporates an LU attribute command receiving program which is used to change the internal control for obtaining a requested attribute. Also provided is a method for fabricating an integrated circuit that includes a semiconductor device for storing charge.