Object The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. The central tube includes two positioning blocks. A sending rate above an allowed threshold causes the upstream transmission of the e-mail packets to be blocked by injecting connection destroying packets. The second control device is configured to pass a gated-voltage to the gated-node or disconnect the gated-node from the gated-voltage. The strip is exclusively arranged on the eave-sided edge of the roofing plate and the groove around the boundary region of the strip on the roof plate has groove edges inclined towards the groove opening in cross-sectional view. The outlet is disposed adjacent the gas vortex and is configured for discharging the admixed matrix and particles from the mixing chamber.