A LDMOS transistor and a method for fabricating the same. Initially, air is compressed using one or more compressors to obtain a compressed hot air. The pre-implementing adsorbed liquid is fully filled in the patterned structures formed on the wafer by multilayer absorption of the vaporized liquid molecules and the temperature of the wafer surface is above dew point of the vaporized liquid while condensing, which avoids generating bubbles inside the patterned structures. A vibration mechanism is positioned so as to cause the cleaning chamber to vibrate while the cleaning chamber is fitted within the holding frame. The operational modes may dictate the number of storage levels to be associated with each cell within the memory’s storage matrix.