A method for forming a lightly doped drain field effect transistor uses very thin first sidewall spacers over the gate sidewalls, in which annealingoxidation of the sidewall spacers results in the rounding of corner portions of the gate structure sidewalls adjacent the gate oxide, and a very low thermal consumption comprising a small portion of the total thermal budget. The system includes a computer system that determines information and an identity, which are at least partially indicative of a text field. A check register stores the random access code and enables write operations to the flash memory array based upon an externally provided access code. Then, active contours are generated by the contour determination module and the active contour module, so as for the geometric center axis computing module to calculate geometric center axes. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention.