Disclosed are systems and apparatus adapted to control a temperature of a process liquid in a metering line of an instrument. The metals are ultimately recovered from above-ground plant tissues at economically acceptable levels without further contaminating the metal-containing sites. Then, by cutting the second substrate, a working body and a pedestal are formed. The drift region dopant concentration, drift region thickness and gate capacitance are adjusted dependent at least in part upon the PNP gain of the IGBT to maintain the potential difference between the gate and emitter at a level greater than the IGBT threshold voltage when the collector voltage reaches the bus voltage.