A semiconductor device includes at least one ohmic contact region between a semiconductor substrate of the semiconductor device and an electrically conductive structure arranged adjacent to the semiconductor substrate. The method may include obtaining information through sources of variability of history based components of delay variability, and a relationship between the sources of variability and one or more bounded device histories. Moreover, the current spreader is adapted to spread current flowing from the electrode into the drift region. If the number of scanlines per strip is small enough, the difference in a margin created by the change of one strip will not be apparent.