The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. Steam temperature at an outlet of the tubing is measured and a heat flow from the well to the oil reservoir is calculated. At least one line electrically connects the semiconductor chip to the base layer of the lead lock. The compressively strained layer is substantially planar, having a surface roughness characterized in having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or having an average height less than 10 nm. Then molten molding resin is injected into the molding cavity such that a bottom face of a solidified molding resin and the bottom face of the terminal connecting portion define an identical plane. In one embodiment, the scavenger contains erythorbate and alkylhydroxlyamine.