A method for manufacturing Group III nitride crystals with high quality is provided. The wirelessly-chargeable stretch-resistant light-emitting structure includes a woven member, conductive twisted cables, a light-emitting element, and a receiver circuit. The carbon containing layers introduce carbon into the extension regions and the gate region during thermal annealing. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing. In addition to the release of heat energy, the hydrocarbon feedstocks are oxidized to the pure product compounds of water and carbon dioxide, which are subsequently purified and marketed.