A system for use with a subterranean well can include a tubular string with a fluid discharge apparatus, the fluid discharge apparatus including a curved flow path which directs a fluid to flow less toward a structure external to the tubular string. The job flow system includes a plurality of sequence-related jobs associated with the manufacturing and a computer-controlled Petri Net structure. The first plurality of characteristics and the second plurality of characteristics are both assessed. First and second antiferromagnetic layers can be provided adjacent to the pinned ferromagnetic layer and the laminated pinned structure, respectively. The coatings make the same wavelength drift of spectrum for both P and S polarised lights between the dichroic mirrors and the X-cube. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element.