A method for applying a decorative metal finish to a substrate is provided which includes the following steps. An equal string current is drawn from the batteries of the battery string and redistributed as a plurality of secondary currents to each battery depending upon the comparative voltage of the individual batteries. A novel process sequence allowing formation of a thicker silicon layer overlying a SiGe layer, allows the NMOS channel region to exist in the silicon layer which is under biaxial tensile stain enhancing electron mobility. Etching the patterned photoresist includes forming a first group of through silicon vias configured to electrically connect a first surface of the substrate to a first electrical interface adjacent an opposite second surface of the substrate. An insulating layer is provided on the lower gate structure including the oxidation layer.