1461159774-f2f362b5-8e55-49f2-b1e2-969b488bcde0

A high voltage MOS device with multiple p-regions is disclosed. An image of an object obtained by photographing the object is input in real time as digital object image data. Other embodiments are described and claimed herein. The stop flange is in the form of a circumferentially continuous base of uniform thickness circumferentially of the band, and either uniform or increasing thickness radially and axially of the band. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.