A flash memory device includes a flash cell array, a first flash fuse cell fusing circuit, a second flash fuse cell fusing circuit, a third flash fuse cell fusing circuit and a plurality of fuse sense amplifying circuits. In one embodiment, the network device is configured to run a script containing intelligence during a reboot event. The image data can also be subjected to filtering with second andor third geometric filters which enhance different geometric patterns, and which produce respective filtered data which are also processed to derive the measure indicative of the presence of the object. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development.