The present invention relates to a method of manufacturing a semiconductor integrated circuit in which a via hole reaching a metal wiring and a concave groove are simultaneously formed in an interlayer film. Preferred compositions comprise an iron complex of tartaric acid for use in membrane electrolysis operations. A scanning speed changes on the basis of the result of the first measurement step. The disposal device material can be in the form of pellets, beads, beadlets, granules, or the like, and can be incorporated into a disposal device reservoir. This permits supply of a working gas to a cold head using a compressor in such a manner that the artifacts in the NMR signals caused by the pressure pulses of the working gas are minimized.