A flash memory cell transistor and a method for fabricating the same compensates a work function difference of a pMOS and a nMOS with a triple gate insualting film by using electron density trapped in a pMOS gate insulating film. As the printhead is tilted to a print position, a first position electrical signal is detected by sampling a resistance on the torque motor at a first time. The clip member has at least one keyhole groove comprising an opening and a slot. Between the driven shaft of the electric servomotor and the transmission a planetary gear is connected. In more detailed embodiments, each link between the first network element and the second network element includes a globally unique link identifier, which includes an associated autonomous system number. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.