According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. Third and fourth amplifiers amplify the voltage value of a second signal and generate third and fourth amplified signals. Such a process is particularly useful when low-k dielectrics are used as the dielectric material, as low-k dielectrics can be easily damaged by known barrier layer removal techniques. After flipping and bonding of the assembly on a second substrate, a second gate is formed in the gate cavity.