A thin film transistor and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The machine is a racket stringing machine comprised of a mounting plate, a first string gripper and a second string gripper, a first string clamp and a second string clamp. In turn, the slit stops spread or constrict to change maneuvering characteristics of the ski. At least the part of the filler exposed to the surface of the sealing resin includes a crack that extends from an exposed surface of the filler into an inner portion. A variety of options when collecting the profiling data and grouping the data members is supported.