A phase-change random access memory device includes a semiconductor substrate, a bottom electrode structure formed on the semiconductor substrate, a cylindrical bottom electrode contact that includes a conductive material layer, which is in contact with the bottom electrode, and a cylindrical phase-change material layer that is in contact with the bottom electrode contact. Since this increases the area size of a contact portion where the wire and the metal core contact each other, it is possible to increase the force of static friction which fixes the wire to the metal core. Each wireless device includes plural antennas.