A selfaligned process for a flash memory comprises applying a solution with a high etch selectivity to etch the sidewall of the tungsten silicide in the gate structure of the flash memory during a clean process before forming a spacer for the gate structure. One embodiment comprises providing a query against the database, the query being associated with a re-execution indication; initially executing the query; providing an initial query result; determining at least one re-execution time from the re-execution indication; and re-executing the query at the at least one determined re-execution time. An annular boss is provided along the inner fan cowl, with the annular boss having a rounded cross section that projects with respect to a smooth shape configuration of the inner fan cowl. Isolated nucleotide molecules, isolated proteins, expression cassettes and transformed plants, plant tissues and plant cells are additionally provided. The first electrode layer, the intermediate layer, and the current collector are bonded together.