A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. Similar devices can be used on other towed vehicles that can cause damage to vehicles or structures if towed away while still attached to the vehicle or structure. A circuit layer is formed on an upper surface of a first substrate, wherein the first substrate includes at least one light-sensing device and the circuit layer includes at least one device structure and at least one release feature that is made of metal and is formed on part of the light-sensing device and the device structure. Each entry may be associated with a category and the step of displaying notification represents the category of the matched entry. Standard cells with high VT transistors in their non-critical circuit pathways exhibit reduced leakage currents when compared with known logic cells. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a second terminal, and a high-voltage transistor is coupled to the antifuse and has a gate terminal.