A tri-directional, high-speed switching element connects to a bus port, an A memory port, and a B memory port. The gaseous waste is preferably condensed by cooling it. The first memory request contains an address corresponding to the memory location. The first and second hanger members are configured to be supported by one or more rails at respective first and second locations longitudinally spaced along the rails. The nanowire is formed over the sacrificial layer, and the sacrificial layer is etched.