A processing module is provided that comprises a set of processing module sides, each comprising a circuit board, a plurality of connectors coupled to the circuit board, and a plurality of processing nodes coupled to the circuit board. The nitride semiconductor FET includes a first semiconductor layer, a second semiconductor layer, a two-dimensional electron gas layer, a T-shaped gate, and a sourcedrain ohmic electrode. The clipping displays a portion of a document corresponding to the area of interest.