The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The first and second structure of soft-magnetic material are adapted to form a gap magnetic field pointing in a direction substantially perpendicular to the elongation of the first gap in the vicinity of the first gap in response to an external magnetic field. At least one tuning vector value is calculated based, at least in part, on a plurality of criteria vectors of the benchmark circuits.