A method for fin field effect transistor device formation includes forming a plurality of fins on a substrate; forming a gate region over the plurality of fins; and forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing one of oxidation or removal of a subset of the plurality of fins. Application of the invention include routing of peer-to-peer network data. The fingers can then be moved around to effect position control. Ion implantation at higher temperatures is used in sequence with regular baseline processing and with ion implantation at cold temperatures.