Integrated circuit memory devices include a semiconductor substrate and a bit line on the semiconductor substrate. The continuous method and apparatus of purifying carbon nanotubes is characterized in a first purifying step for injecting a carbon nanotube liquid mixture containing an oxidizer into a purifying reactor under a sub-critical water or supercritical water condition at a pressure of 50 to 400 atm and a temperature of 100 to 600\xb0 C. A process for making a tile spacer includes providing thinset material to which a liquid latex admix material is added.