A two-transistor non-volatile memory cell is formed in a semiconductor body. For example, an alarm device may rouse a user a predetermined time before a desired waking time, resetting the user’s sleep cycle before waking. A limit current density of the electrode protecting layer is in a range from 0. Also, the formula, Lk2We<Lp<LkWe, is satisfied where Lp is the length of the piezoelectric resonator, Lk is the length of the case substrate, and We is the length of the substrate electrode. Hereby, an inexpensive and voluminous fiber product is achieved having good spring elastic properties as well as good sound and heat insulating properties.