A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. The dynamic variance correction is based on measured variance of the variables and a weighing factor for each of the variables. Pultruded products are formed by drawing fibrous reinforcement through a bath of the pultrusion resin composition. Features from the spatial layer and features from the linked CAM dataset that match the query are generated for display.