A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched therein. Further, an arrangement is provided in each pump piston wherein the inlet or the outlet, or both the inlet as well as the outlet of the fluid in each cylinder bore, is controlled. The input stage produces a difference signal between a reference voltage Vref and a feedback voltage Vfbk, and comprises first and second delta-sigma-delta modulators and a subtractor, a delta-sigma-delta modulator and a subtractor ; or a comparator. The insulating layer and the circuit layer include a plurality of openings that expose the top surface of the heat-conducting layer. Embodiments of the present invention further include a method and computer program product for decomposing a set of schema files in substantially the same manners described above.