The present invention aims at providing a semiconductor memory device that can be manufactured by a MOS process and can realize a stable operation. Each link has upper and lower pivots respectively connected to the cap and the base board. The method further includes, for each test thread, generating a data load on the data connection by repetitively writing test data patterns to a common data file on the server, reading data patterns from the common data file, and comparing the data patterns read from the common data file to the test data patterns written to the common data file to detect data corruptions. According to the present invention, a parameter of the at least one data retention indicator device is chosen so as to set the detection threshold value of the externally applied magnetic field to be detected. With the abutting portion disposed outside the sealant, the uncured sealant is limited from flowing to the cutting edge during the process of bonding the TFT substrate and the CF substrate.