A thin film transistor having an improved gate dielectric layer is disclosed. The ring weighs one to twenty pounds, has an inside diameter of 8-18 inches, an outside diameter of 10-20 inches and is one to two inches thick depending on design and materials. A switching circuit is operable to switch the serial driver between a first power supply voltage level for the burst interval and the predetermined common mode voltage level, wherein the predetermined common mode voltage level is independent of variations in power supply voltage conditions and temperature conditions. The at least one prepreg layer may also include graphene material.