A method is provided for operating a nonvolatile memory comprising memory cells stacked on a substrate. The reinforcing tube is supported in the transition region between the roof pillar and wall pillar section by an end of a strut which extends in the vertical direction of the wall pillar section and encloses a supporting angle with the reinforcing tube. The at least one recess may have dimensions selected for forming the passive element with an intended magnitude of at least one electrical property. The new unitary finishing elements have lower cost to manufacture and high precision. A developer adheres to a specific format for packing up an algorithmic element, or set of instructions, for implementation by a 3D graphics chip. The cathode includes a current collector and a cathode active material layer disposed on the current collector; the cathode active material layer includes a lithium transition metal oxide having a spinel structure, a conductive agent, and a binder; and at least a portion of a surface of the cathode active material layer is fluorinated.