A highly integrated semiconductor memory device capable of operating at high speed having a plurality of main word lines which extend along a first direction across memory blocks, and sub word lines disposed in each of the memory blocks and subordinate to each of the main word lines. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The individual sealed pouch has a perforation seam that bounds a tear-off region. The control messages contain information on the network multicast and a command to connect to the network multicast tree intended for multicasts. Data is automatically transferred from a source data link within the first plurality of data links to a target data link within the second plurality of data links based on the login parameter.