An SRAM device and a method of placing a portion of memory cells of an SRAM device in an active mode is provided. wherein, M1 and M2 are any one selected from a group consisted of a metal, a metal oxide or a metal halide respectively and may be same or different, R is a hydrogen atom, a halogen atom, a hydroxyl group, an amino group, a hydroxysulfonyl group, an aminosulfonyl group, or an alky group having a substituent group having from 1 to 20 carbon atoms, and n is an integer of 0\u02dc3. Upon determining the median tape head amplitude is below the threshold value during the calibration operation, a reference MR bias and a MR bias range is dynamically adjusted, during the calibration operation, for increasing the median tape head amplitude.