Memory devices facilitating differing depths of error detection andor error correction coverage for differing portions of a memory array. In one embodiment, a method for characterizing focus errors in a photolithography system includes placing a microelectronic substrate onto a substrate support of the photolithography system. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays. A display is connected to the gated optical detector for displaying the gated optical output.