The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance RB of the prior art products. The archive can be used to store firmware files containing firmware source code in progress as well as finished source code along with its associated object code. The stress generated along a contact interface of the clamped portion and the brittle material is relaxed with the deformation of the electrode supporting member. A space between the nut holding legs is open sideways. As the treatment process depletes the preservative in the fluid, through absorption in the wood, the depleted fluid is circulated back to the work tank where it is heated and more preservative is added to restore the concentration of preservative in the fluid to a desired level.