The present invention provides a method of forming a strained semiconductor layer. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. This changes the tilt angle of the seal wall 523 with respect to the flange. During operation the extracted honey will collect against the removable flexible membrane where it will flow downwardly and through the outlet opening in the bottom of the outer support structure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.