An anastomosis occlusion device having a low-profile shaft assembly configured for insertion into the lumen of a vessel and a distal perfusion system adapted to be connected to the shaft assembly. The aluminide coating is deposited using a slurry process capable of forming the aluminide coating on the component without damaging an existing ceramic coating on the component. One or more of these charged grids includes at least two aligned common apertures for passing the three electron beams. The highest potential of a gate of the writing transistor can be a high-level potential.