A phase change memory device having buried conduction lines directly underneath phase change memory cells is presented. The hanger is made up of a box part that includes a mounting surface, two spaced distal openings and a central opening that is located between the two distal openings. As a result, the contact area between the substrate and the plug is increased. In response to the request, the system adds a request size to a current partition size to produce a predicted size for the partition. The longer side of each shallow half box also includes recesses, so that the sides do not grip the spectacle arms.