Nitrone derivatives are efficiently prepared by increasing reagent concentrations in reaction solutions. The method includes forming a buried P-type doped layer having low resistance under the P-wells and N-wells in which CMOS transistors are formed and forming a gap in a buried N-type doped layer formed in the P-wells, the is gap aligned under a contact to the P-well. The shield contact element comprises a bristle element for making contact with a cable shield with elastic and electrically conductive bristles. The system may include a display, a computing device in communication with the receiver and an environmental sensor in communication with the communications medium. The hair styling composition of the present invention has improved clarity and humidity resistance.